solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft210 de __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package de = to-72 SFT210DE 50 ma, 30 volt, 1 nsec high speed analog n-channel dmosfet switch features: ? ultra-high speed switching ? t on = 1 ns ? ultra-low reverse capacitance: 0.2pf ? low guaranteed r ds @ 5v ? low turn-on threshold voltage ? n-channel enhancement mode ? replacement for sd210de ? tx, txv, and s-level screening available. consult factory. 2 / maximum ratings symbol max units drain ? source breakdown voltage source ? drain voltage v ds v sd 30 10 volts gate - drain voltage v gd + 40 volts gate - source voltage v gs + 40 volts gate ? body (substrate) voltage v gb + 30 volts drain ? body (substrate) voltage v db 30 volts source ? body (substrate) voltage v sb 15 volts drain current i d 50 ma power dissipation t a = 25 o c t c = 25 o c p d 300 1.2 mwatts watts maximum thermal resistance junction to ambient junction to case r ja r jc 335 85 oc/w lead temperature (1/16? from case for 10 seconds) t l 300 oc operating & storage temperature t op t stg -55 to +125 -65 to +150 oc oc package outline: to-72 pin assignment pin 1 source pin 2 drain pin 3 gate pin 4 body (substrate) note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0035a doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 s sdi@ssdi-power.com * www.ssdi-power.com SFT210DE electrical characteristics 3 / symbol typ min max units drain ? source breakdown voltage v gs = v bs = 0 v, i d = 10 a v gs = v bs = -5 v, i d = 10na v (br)ds 35 30 30 10 -- volts source ? drain breakdown voltage v gd = v bd = -5 v, i s = 10na v (br)sd 22 10 -- volts drain ? substrate breakdown voltage v gb = 0 v, i d = 10na, source open v (br)dbo 35 15 -- volts source ? substrate breakdown voltage v gb = 0 v, i s = 10 a, drain open v (br)sbo 35 15 -- volts drain ? source on state resistance ( i d = 1 ma, v sb = 0 v) v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v v gs = 25 v r ds(on) 58 38 30 26 24 -- -- -- -- -- 70 45 -- -- -- ohms drain ? source leakage v gs = v bs = -5v v ds = 10v v ds = 20v i ds(off) 0.5 1.0 -- -- 10 -- na source ? drain leakage v gd = v bd = -5v v sd = 10v v sd = 20v i sd (off) 0.5 0.8 -- -- 10 -- na gate leakage v db = v sb = 0 v, v gb = 40v i gbs 0.001 -- 0.1 na threshold voltage v ds = v gs , i d = 1 a, v sb =0v v gs(th) 0.8 0.5 2.0 volts forward transconductance v ds = 10v, v sb = 0 v , i d = 20ma, f = 1 khz g fs g os 11 0.9 10 -- -- -- ms gate node capacitance c (gs+gd+gb) 2.5 -- 3.5 pf drain node capacitance c (gd+gb) 1.1 -- 1.5 pf source node capacitance c (gs+sb) 3.7 -- 5.5 pf reverse transfer capacitance v ds = 10v, f = 1mhz v gs = v bs = -15v c rss (c dg ) 0.2 -- 0.5 pf turn on delay time t d (on) 0.5 -- 1 ns rise time t r 0.6 -- 1 ns turn off delay time t d (off) 2 -- -- ns fall time v sb = 0 v, v in 0 to 5 v, r g = 25 v dd = 5 v, r l = 680 t f 6 -- -- ns notes: * pulse test: pulse width = 100 sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500 3 / unless otherwise specified, all electrical characteristics @25oc . note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: ft0035a doc
|
